US 11,887,689 B2 · Techniques for precharging a memory cell

Abstract

Methods and devices for techniques for precharging a memory cell are described. Precharging a memory cell while the memory cell is coupled with its digit line may reduce a total duration of an access operation thereby reducing a latency associated with accessing a memory device. During a read operation, the memory device may select a word line to couple the memory cell with a selected digit line. Further, the memory device may selectively couple the selected digit line with a reference digit line that is to be precharged to a given voltage. A difference in voltage between the selected digit line and the reference digit line at the completion of precharging may represent a signal indicative of a logic state of the memory cell. The memory device may use a capacitor precharged to a first voltage to capture the signal. In some cases, the memory device may continue to perform a self-reference operation using the same memory cell, the selected digit line, and the reference digit line to produce a reference signal using the capacitor precharged to a different voltage. A similar precharging steps may be repeated during the self-reference operation. The selected word line may remain activated during the read operation and the self-reference operation.

Claims20

Dependent claims

An apparatus, comprising:

a word line coupled with a memory cell that is configured to store a logic state;
a sense component comprising:
a capacitor coupled with a digit line associated with the memory cell and configured to discharge to a voltage representative of the logic state during a period of time that the word line is activated;
and
a switching component coupled with the digit line, wherein the sense component is configured to activate the switching component after the capacitor discharges to the voltage representative of the logic state to transfer charge to the digit line from the capacitor to discharge the capacitor to a reference voltage during the period of time that the word line is activated.

2 more elements

Dependencies are inferred from the claim text.

Techniques for precharging a memory cell

Life of this patent

Techniques for precharging a memory cell

Life of this patent

Abstract

Claims20