Read operations for a memory array and register

A memory device of comprising:

• a memory array comprising a plurality of memory cells configured to store first data, wherein the first data is output from the memory array based at least in part on the memory device receiving a first command;
• a first buffer coupled with the memory array and configured to buffer the first data based at least in part on the first data being output from the memory array, wherein the first buffer comprises a first-in first-out (FIFO) buffer having a first depth;
• a register configured to store second data, wherein the second data is output from the register based at least in part on the memory device receiving a second command different than the first command;
• a second buffer coupled with the register and configured to buffer the second data based at least in part on the second data being output from the register, the second buffer comprising a FIFO buffer having a second depth different than the first depth, wherein a buffer depth is associated with a quantity of data bursts that a respective buffer can store during a duration;
• and
• a multiplexer coupled with the first buffer, the second buffer, and a data bus, wherein the multiplexer is configured to output the first data and the second data on the data bus during consecutive sets of clock cycles.

A method, comprising:

• receiving, during a first set of clock cycles, a first command for reading first data of a memory array of a memory device, wherein the memory device comprises the memory array and a register associated with one or more parameters for operation of the memory device;
• receiving a second command for reading second data of the register of the memory device during a second set of clock cycles;
• and
• outputting the first data from the memory array and the second data from the register via a data bus coupled with the memory array and the register based at least in part on receiving the first command and the second command, wherein the first data is output from the memory array during a third set of clock cycles and the second data is output from the register during a fourth set of clock cycles, and wherein a last clock cycle of the third set of clock cycles and a first clock cycle of the fourth set of clock cycles are consecutive clock cycles, and
• wherein a first latency between receiving the first command and outputting the first data is the same as a second latency between receiving the second command and outputting the second data.

An apparatus, comprising:

• a memory array;
• a register coupled with the memory array, wherein the register is associated with one or more parameters for operation of the memory array;
• a data bus coupled with the memory array and the register;
• and
• a controller coupled with the memory array and the register, wherein the controller is operable to cause the apparatus to:
• receive, during a first set of clock cycles, a first command for reading first data of the memory array;
• receive a second command for reading second data of the register during a second set of clock cycles;
• and
• output the first data from the memory array and the second data from the register via the data bus coupled with the memory array and the register based at least in part on receiving the first command and the second command, wherein the first data is output from the memory array during a third set of clock cycles and the second data is output from the register during a fourth set of clock cycles, and wherein a last clock cycle of the third set of clock cycles and a first clock cycle of the fourth set of clock cycles are consecutive clock cycles, and
• wherein a first latency between receiving the first command and outputting the first data is the same as a second latency between receiving the second command and outputting the second data.