Loading patent…
AssigneesUniversity of Florida Research Foundation, Inc., Washington University
InventorsYier Jin, Yichen Jiang, Xuan Zhang, Huifeng Zhu, Xiaolong Guo
Estimating the term…
Embodiments provide for predicting rowhammer attack vulnerability of one or more memory cells of a direct random access memory (DRAM) chip, the DRAM chip including a plurality of memory cells. An example method, determines, for each memory cell of a subset of memory cells of the plurality of memory cells, a leakage time t, a resistance of intrinsic leakage RL based at least in part on the leakage time t, an activation time of an adjacent aggressor row to flip a bit in the memory cell, a resistance of coupling leaking RSW based at least in part on the activation time, and a toggling count. The method identifies, based at least in part on one or more of the RSW, RL, or toggling count, whether the direct random memory access (DRAM) chip is vulnerable to a rowhammer attack.
A method of predicting rowhammer attack vulnerability of one or more memory cells of a direct random access memory (DRAM) chip, the DRAM chip comprising a plurality of memory cells, the method comprising:
An apparatus for predicting rowhammer attack vulnerability of one or more memory cells of a direct random access memory (DRAM) chip, the DRAM chip comprising a plurality of memory cells, the apparatus comprising at least one processor and at least one memory storing instructions that, with the at least one processor, configure the apparatus to:
A computer program product for predicting rowhammer attack vulnerability of one or more memory cells of a direct random access memory (DRAM) chip, the DRAM chip comprising a plurality of memory cells, the computer program product comprising at least one non-transitory computer storage medium storing instructions that, with at least one processor, configure an apparatus to:
Dependencies are inferred from the claim text.