Programming for three-dimensional NAND memory
AssigneeYangtze Memory Technologies Co., Ltd.
InventorsHaibo Li, Joohyun Jin, Chao Zhang
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Abstract
A method for programming a three-dimensional (3D) memory device is provided. The 3D memory device has a plurality of memory strings with memory cells vertically stacked, and each memory cell is addressable through a word line and a bit line. The method for programming the 3D memory device includes the following steps: applying a program voltage on a selected word line; applying a first pass voltage on a first group of unselected word lines; and applying a second pass voltage on a second group of unselected word lines, wherein the second pass voltage is different from the first pass voltage.
Claims18
A method for programming a three-dimensional (3D) memory device, wherein the 3D memory device comprises memory strings with memory cells vertically stacked, and wherein each memory cell is addressable through a word line and a bit line, the method comprising:
- applying a program voltage on a selected word line;
- applying a first pass voltage on a first group of unselected word lines;
- applying a second pass voltage on a second group of unselected word lines, wherein the second pass voltage is different from the first pass voltage;
- and
- determining a first maximum pass voltage when shifts of threshold voltages of a first set of unselected memory cells connected to the first group of unselected word lines are less than a maximum allowed shift.
A three-dimensional (3D) memory device, comprising:
- a plurality of memory cells connected to word lines and bit lines configured for addressing each of the plurality of memory cells, wherein the plurality of memory cells are vertically stacked;
- and
- a peripheral circuit configured to program a selected memory cell, comprising:
- a control circuit, configured to send a control signal to a word line driver, wherein the word line driver, according to the control signal, is configured to:
- apply a program voltage on a selected word line;
- apply a first pass voltage on a first group of unselected word lines;
- apply a second pass voltage on a second group of unselected word lines, wherein the second pass voltage is different from the first pass voltage;
- and
- determine a first maximum pass voltage when shifts of threshold voltages of a first set of unselected memory cells connected to the first group of unselected word lines are less than a maximum allowed shift.
A storage system, comprising:
- a memory controller;
- and
- a three-dimensional (3D) memory device, comprising:
- a plurality of memory cells connected to word lines and bit lines configured for addressing each of the plurality of memory cells, wherein the plurality of memory cells are vertically stacked;
- and
- a peripheral circuit configured to program a selected memory cell, comprising:
- a control circuit, configured to send a control signal to a word line driver, wherein the word line driver, according to the control signal, is configured to:
- apply a program voltage on a selected word line;
- apply a first pass voltage on a first group of unselected word lines;
- apply a second pass voltage on a second group of unselected word lines, wherein the second pass voltage is different from the first pass voltage;
- and
- determine a first maximum pass voltage when shifts of threshold voltages of a first set of unselected memory cells connected to the first group of unselected word lines are less than a maximum allowed shift.
Dependencies are inferred from the claim text.