Memory cell programming that cancels threshold voltage drift
AssigneeMicron Technology, Inc.
InventorHari Giduturi
Life of this patent
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Abstract
The present disclosure includes apparatuses, methods, and systems for memory cell programming that cancels threshold voltage drift. An embodiment includes a memory having a plurality of memory cells, and circuitry configured to program a memory cell of the plurality of memory cells to one of two possible data states by applying a first voltage pulse to the memory cell, wherein the first voltage pulse has a first polarity and a first magnitude, and applying a second voltage pulse to the memory cell, wherein the second voltage pulse has a second polarity that is opposite the first polarity and a second magnitude that can be greater than the first magnitude.
Claims18
An apparatus, comprising:
- a memory having a plurality of memory cells;
- and
- circuitry configured to program a memory cell of the plurality of memory cells to one of two possible data states by:
- applying a first voltage pulse to the memory cell, wherein:
- the first voltage pulse has a negative polarity;
- and
- the first voltage pulse has a first magnitude;
- and
- applying a second voltage pulse to the memory cell, wherein:
- the second voltage pulse has a positive polarity;
- and
- the second voltage pulse has a second magnitude;
- and
- wherein the one of the two possible data states to which the memory cell is being programmed is in the negative polarity direction.
A method of operating memory, comprising:
- programming a memory cell to one of two possible data states by:
- applying a first voltage pulse to the memory cell, wherein:
- the first voltage pulse has a negative polarity;
- and
- the first voltage pulse has a same magnitude as a voltage used to distinguish memory cells of the memory programmed to the one of the two possible data states from memory cells of the memory programmed to the other one of the two possible data states;
- and
- applying a second voltage pulse to the memory cell after applying the first voltage pulse to the memory cell, wherein the second voltage pulse has a positive polarity;
- and
- wherein the memory cell is a self-selecting memory cell.
A method of operating memory, comprising:
- programming a self-selecting memory cell to one of two possible data states by applying a voltage pulse to the memory cell, wherein:
- the voltage pulse has a positive polarity;
- the voltage pulse has a magnitude that is a maximum voltage magnitude used to program self-selecting memory cells of the memory to the one of the two possible data states.
Dependencies are inferred from the claim text.