Systems and methods for adaptive self-referenced reads of memory devices

A method, comprising:

• applying a first voltage having a first voltage duration to a memory array of a memory device in response to receiving a read request;
• counting a number of a plurality of memory cells that have switched to an active read state based on applying the first voltage;
• deriving a second voltage duration based on the counting;
• and
• applying a second voltage having the second voltage duration to the memory array.

A memory device, comprising:

• a memory array comprising a plurality of memory cells;
• a control circuit operatively coupled to the memory array, the control circuit configured to:
• apply a first voltage having a first voltage duration to the memory array in response to receiving a read request;
• count a number of the plurality of memory cells that have switched to an active read state based on the first voltage;
• use a lookup table (LUT) to determine if the number falls inside of a range of activated memory cells and derive a second voltage duration based on the determination;
• and
• apply a second voltage having the second voltage duration to the memory array.