US 11,887,646 B2 · Capacitor structure and method of forming the same

Abstract

In a method for manufacturing a semiconductor device, a doped region is formed in a substrate from a first main surface. An insulating layer is formed over the doped region of the substrate. Contacts are formed in the insulating layer such that the contacts extend into the doped region. A portion of the substrate is removed from a second main surface. A trench, a first conductive line, and a second conductive line are formed from the doped region of the substrate through etching the substrate from the second main surface. The trench extends through the substrate to expose the insulating layer. The first and second conductive lines are spaced apart from each other by the trench. The contacts are positioned along and in contact with the first and second conductive lines. The trench is filled with a dielectric material.

Claims20

Dependent claims

A method for manufacturing a semiconductor device, comprising:

forming a doped region in a substrate from a first main surface;
forming an insulating layer over the doped region of the substrate;
forming contacts in the insulating layer, the contacts extending into the doped region,
removing a portion of the substrate from a second main surface;
forming a trench, a first conductive line and a second conductive line from the doped region of the substrate through etching the substrate from the second main surface, wherein the trench extends through the substrate to expose the insulating layer, the first and second conductive lines are spaced apart from each other by the trench, and the contacts are positioned along and in contact with the first and second conductive lines;
and
filling the trench with a dielectric material.

4 more elements

A method for manufacturing an integrated circuit chip, comprising:

forming a doped region in a substrate from a first main surface, the substrate having an opposing second main surface;
forming a transistor at a first location of the first main surface of the substrate;
and
forming a capacitor at a second location of the substrate, the capacitor comprising:
a first conductive line and a second conductive line that are formed from the doped region of the substrate and extends from the first main surface to the second main surface of the substrate;
an insulating structure that is formed between the first and second conductive lines and extends from the first main surface to the second main surface;
and
contacts formed in a dielectric layer and arranged along the first and second conductive lines, the dielectric layer being formed over the first main surface of the substrate, the contacts extending through the dielectric layer and into the first and second conductive lines.

5 more elements

Dependencies are inferred from the claim text.

Capacitor structure and method of forming the same

Life of this patent

Capacitor structure and method of forming the same

Life of this patent

Abstract

Claims20