Method and storage device for improving NAND flash memory performance for intensive read workloads

A storage device comprising:

• a volatile memory;
• a non-volatile memory;
• and
• a storage device controller, operably connected to the volatile memory and the non-volatile memory, configured to:
• receive a read command from a host device, wherein the read command comprises a Logical Block Address (LBA) of stored data to be read;
• obtain a Physical Block Number (PBN) based on the LBA and a Logical to Physical (L2P) mapping;
• determine whether the PBN is a block of the volatile memory;
• read the stored data directly from the volatile memory based on the PBN being a block of the volatile memory;
• increment a read counter associated with the PBN based on the stored data being read directly from the volatile memory;
• read the stored data from the non-volatile memory based on the PBN not being a block of the volatile memory;
• and
• determine whether a read disturbance exceeds a threshold limit and whether the read counter exceeds a maximum read limit while the stored data is read from the non-volatile memory.

A storage device controller comprising:

• at least one processor configured to:
• receive a read command from a host device, wherein the read command comprises a Logical Block Address (LBA) of stored data to be read;
• obtain a Physical Block Number (PBN) based on the LBA and a Logical to Physical (L2P) mapping;
• determine whether the PBN is a block of a volatile memory of a storage device;
• read the stored data directly from the volatile memory based on the PBN being a block of the volatile memory;
• increment a read counter associated with the PBN based on the stored data being read directly from the volatile memory;
• read the stored data from a non-volatile memory of the storage device based on the PBN not being a block of the volatile memory;
• and
• determine whether a read disturbance exceeds a threshold limit and whether the read counter exceeds a maximum read limit while the stored data is read from the non-volatile memory.