Memory access threshold based memory management
AssigneeMicron Technology, Inc.
InventorGuang Hu
Life of this patent
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Abstract
A method includes determining respective memory access counts of a plurality of blocks of non-volatile memory cells that are grouped into a plurality of respective groups, comparing the respective memory access counts to respective memory access thresholds, determining a respective memory access count of a block of non-volatile memory cells exceeds a respective memory access threshold, and performing a media scan operation on the block of non-volatile memory cells.
Claims17
A non-transitory computer-readable storage medium comprising instructions that, when executed by a processing device, causes the processing device to:
- compare respective memory access counts of blocks of non-volatile memory cells that are grouped into respective groups to different respective memory access thresholds of the respective groups, wherein each respective group has a different respective memory access threshold, and wherein the different respective memory access thresholds are each incrementally different by a fixed value that is equal to a total number of pages in a block of non-volatile memory cells in the blocks of non-volatile memory cells;
- determine a respective memory access count of a block of non-volatile memory cells exceeds a respective memory access threshold of a respective group in which the block of non-volatile memory cells is grouped;
- and
- perform a media scan operation on the block of non-volatile memory cells.
An apparatus, comprising:
- a controller configured to:
- set different respective read operation thresholds for each group of a plurality of groups of non-volatile memory blocks of a memory component, wherein each group of the plurality of respective groups has a different respective read operation threshold, and wherein the different respective read operation thresholds are each incrementally different by a fixed value, wherein the fixed value is equal to a total number of pages in a block of non-volatile memory cells in a non-volatile memory block of the memory component;
- determine respective read operation counts of the non-volatile memory blocks of the memory component;
- determine a respective read operation count of a first non-volatile memory block exceeds a corresponding respective read operation threshold of a group in which the first non-volatile memory block is grouped;
- and
- responsive to the determination the respective read operation count exceeds the corresponding respective read operation threshold, perform a media scan operation on the first non-volatile memory block.
A system, comprising:
- a memory component comprising a stackable cross-gridded array of a plurality of blocks of non-volatile memory cells;
- a processing device coupled to the memory component, wherein the processing device is configured to:
- set different respective read operation thresholds for each group of a plurality of respective groups of blocks of non-volatile memory cells in the memory component, wherein each group of the plurality of respective groups has a different respective read operation threshold, and wherein the different respective read operation thresholds are each incrementally different by a fixed value that is equal to a total number of pages in a block of non-volatile memory cells in a first block of non-volatile memory block of the memory component;
- select a first group having a first read operation threshold;
- determine a respective read operation count of a block of non-volatile memory cells in the first group exceeds the first read operation threshold;
- and
- perform a media scan operation on the block of non-volatile memory cells in the first group.
Dependencies are inferred from the claim text.