Block family-based error avoidance for memory devices

A method, comprising:

• identifying, by a processing device, based on block family metadata associated with a memory device, a block family associated with a physical block of the memory device;
• identifying a first threshold voltage offset bin associated with the block family;
• associating the block family with a second threshold voltage offset bin by calibrating an oldest block family associated with the first threshold voltage offset bin;
• reading, using a threshold voltage offset associated with the second threshold voltage offset bin, data from the physical block.

A method, comprising:

• associating, by a processing device, a current block family of a memory device with a first threshold voltage offset bin;
• responsive to programming a block residing on the memory device, associating the block with the current block family;
• and
• associating the current block family with a second threshold voltage offset bin by calibrating an oldest block family associated with the first threshold voltage offset bin.