Temperature assisted NAND flash management

A non-volatile storage system, comprising:

• a non-volatile storage device;
• a temperature sensor;
• and
• a processor configured to:
• obtain a read-out from the temperature sensor;
• generate a predicted real-time on-die temperature for the non-volatile storage device based on the read-out;
• generate an estimated threshold voltage for reading data stored in the non-volatile storage device based on the predicted real-time on-die temperature;
• and
• conduct a local sweep of a reference voltage using the estimated threshold voltage as a starting point to obtain a final read reference voltage with a minimum read bit error rate.

A non-transitory machine-readable medium having computer instructions, wherein the computer instructions, when executed by a hardware processor, cause the hardware processor to perform:

• obtaining a read-out from a temperature sensor in a non-volatile storage system;
• generating a predicted real-time on-die temperature for a non-volatile storage device in the storage system based on the read-out;
• generating an estimated threshold voltage for reading data stored in the non-volatile storage device based on the predicted real-time on-die temperature;
• and
• conducting a local sweep of a reference voltage using the estimated threshold voltage as a starting point to obtain a final read reference voltage with a minimum read bit error rate.