Adaptive voltage converter
AssigneeAmbiq Micr, Inc.
InventorScott Hanson
Life of this patent
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Abstract
An adaptive voltage converter adapted to compensate for the exponential sensitivities of sub-threshold and near-threshold circuits. The converter can change its power/performance characteristics between different energy modes. The converter may comprise two or more voltage converters/regulators. A multiplexing circuit selects between the outputs of the several converters/regulators depending on the state of a control signal generated by a control facility. The converter is specially adapted to change the output of each converter/regulator based on a number of variables, including, for example, process corner, temperature and input voltage.
Claims23
A voltage conversion method adapted to deliver to a load a regulated voltage, VReg, said method comprising the steps of:
- developing a first tuning parameter and a second tuning parameter, said first tuning parameter being developed as a function of a process corner, and said second tuning parameter adjusts a complementary-to-absolute temperature coefficient of a sub-threshold regulated voltage, VSub, wherein VSub is less than a selected transistor threshold voltage, Vth;
- storing said first tuning parameter and said second tuning parameter;
- developing a reference voltage, VRef, as a function of said first tuning parameter;
- developing said sub-threshold regulated voltage, VSub, as a function of said second tuning parameter and of said reference voltage, VRef;
- and
- selecting as said regulated voltage, VReg, said sub-threshold regulated voltage, VSub.
A voltage conversion method adapted to deliver to a load a regulated voltage, VReg, said method comprising the steps of:
- developing a first tuning parameter and a second tuning parameter, said first tuning parameter being developed as a function of a process corner, and said second tuning parameter adjusts a complementary-to-absolute temperature coefficient of a near-threshold regulated voltage, VNear, wherein VNear is greater than or equal to a selected transistor threshold voltage, Vth, and less than or equal to the sum of said selected transistor threshold voltage, Vth, and 0.4 volts;
- storing said first tuning parameter and said second tuning parameter;
- developing a reference voltage, VRef, as a function of said first tuning parameter;
- developing said near-threshold regulated voltage, VNear, as a function of said second tuning parameter and of said reference voltage, VRef;
- and
- selecting as said regulated voltage, VReg, said near-threshold regulated voltage, VNear.
In an adaptive voltage converter facility manufactured using a selected process having a process corner, a method comprising using the voltage conversion facility to perform the steps of:
- developing a tuning parameter adapted to adjust a complementary-to-absolute temperature coefficient of a selected one of a sub-threshold regulated voltage, VSub, wherein VSub is less than a selected transistor threshold voltage, Vth, and a near-threshold regulated voltage, VNear, wherein VNear is greater than or equal to a selected transistor threshold voltage, Vth, and less than or equal to the sum of said selected transistor threshold voltage, Vth, and 0.4 volts;
- and
- developing said selected one of a sub-threshold regulated voltage, VSub, and a near-threshold regulated voltage, VNear, as a function of the tuning parameter.
A method for developing a regulated voltage, Vdd, wherein Vdd is less than a selected transistor threshold voltage, Vth, said method comprising the steps of:
- developing a first tuning parameter as a function of a process corner;
- developing a second tuning parameter as a function complementary to absolute temperature;
- storing said first and second tuning parameters;
- developing a reference voltage, VRef, as a function of said stored first tuning parameter;
- and
- developing said regulated voltage, Vdd, as a function of said stored second tuning parameter, and of said reference voltage, VRef.
A method for use during the manufacture and operation of an integrated circuit for developing a regulated voltage, Vdd, wherein Vdd is less than a selected transistor threshold voltage, Vth, said method comprising the steps of:
- during the manufacture of the integrated circuit:
- developing a first tuning parameter as a function of a selected process corner;
- developing a second tuning parameter as a function complementary to absolute temperature;
- and
- storing said first and second tuning parameters;
- and
- during the operation of the integrated circuit:
- loading said first and second tuning parameters;
- developing a reference voltage, VRef, as a function of said loaded first tuning parameter;
- and
- developing said regulated voltage, Vdd, as a function of said loaded second tuning parameter and of said reference voltage, VRef.
Dependencies are inferred from the claim text.