Deposition of semiconductor integration films

A method of forming a photoresist layer over a substrate in a vacuum chamber, comprising:

• initiating a deposition cycle, wherein the deposition cycle comprises:
• providing a metal precursor vapor into the vacuum chamber, wherein the metal precursor has a generic formula MRxLy, wherein M is a metal, R is a leaving group, L is a ligand, x is between 0 and 6, and y is between 0 and 6, wherein the metal precursor vapor absorbs to a surface over the substrate, and wherein a flow rate of the metal precursor vapor over a center of the substrate is different than a flow rate of the metal precursor vapor proximate to an edge of the substrate;
• purging the vacuum chamber;
• providing a first oxidant vapor and then a second oxidant vapor into the vacuum chamber, wherein a reaction between the metal precursor absorbed to the surface over the substrate and the first oxidant vapor and then the second oxidant vapor results in the formation of the photoresist layer over the surface of the substrate, wherein the photoresist layer is a metal oxo containing material, and wherein a flow rate of the first oxidant vapor or the second oxidant vapor over a center of the substrate is different than a flow rate of the first oxidant vapor or the second oxidant vapor proximate to an edge of the substrate, and wherein the second oxidant vapor is different than the first oxidant vapor;
• and
• purging the vacuum chamber.