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US 11,886,019 B2Granted
Method of forming photonics structures
AssigneeMicron Technology, Inc.
InventorGurtej Sandhu
Life of this patent
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Abstract
The disclosed embodiments relate to an integrated circuit structure and methods of forming them in which photonic devices are formed on the back end of fabricating a CMOS semiconductor structure containing electronic devices. Doped regions associated with the photonic devices are formed using microwave annealing for dopant activation.
Claims8
A semiconductor structure, comprising:
- at least one CMOS structure containing an electronic device formed from a first semiconductor material over a substrate;
- at least one photonic device formed from a second semiconductor material disposed above the electronic device, the at least one photonic device having associated microwave activated dopant implants;
- a first interlayer dielectric (ILD) metallization structure between the first semiconductor material and the second semiconductor material, configured to electrically couple the electronic device and the at least one photonic device;
- and
- a second ILD metallization structure disposed above the at least one photonic device and electrically coupled to the first ILD metallization structure by a contact passing through the second semiconductor material.
2 more elements
Dependencies are inferred from the claim text.