Test method of a semiconductor device and manufacturing method of a semiconductor device
AssigneeMitsubishi Electric Corporation
InventorHajime Sasaki
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Abstract
A test method for a semiconductor device comprising a substrate wafer (1), in which an element is formed and a material through which an infrared ray can be transmitted, and a package having an airtight space (7) between a cap wafer (3), which is provided opposite to the substrate wafer (1); and which includes a water applying process in which the semiconductor device is exposed to a high moisture atmosphere and a leak discrimination process in which an infrared ray from the semiconductor device is detected and a leak of the package is discriminated based on absorption of the infrared ray by water molecules.
Claims8
A test method of a semiconductor device having a package with an airtight space, which is provided between a substrate wafer in which an element is formed and a cap wafer which is made of a material which can transmit an infrared ray and is provided opposite to the substrate wafer, the test method comprising:
- a water applying process in which the semiconductor device is exposed to a moisture atmosphere;
- and
- a leak discrimination process in which an infrared ray transmitted from the semiconductor device is detected and a leak of the package is discriminated based on absorption of the infrared ray by water molecules are included, wherein
- the leak discrimination process comprises the steps of:
- supplying electric power to the element which is formed in the substrate wafer;
- and
- discriminating the leak of the package based on an infrared ray spectrum, which is radiated from the element and is radiated outside the package.
A test method of a semiconductor device having a package with an airtight space, which is provided between a substrate wafer in which an element is formed and a cap wafer which is made of a material which can transmit a light and is provided being opposite to the substrate wafer, the test method comprising:
- a water applying process in which the semiconductor device is cooled after the semiconductor device is exposed to a moisture atmosphere;
- and
- a leak discrimination process comprising the steps of:
- making light including light having a wavelength that can transmit the cap wafer incident into the cap wafer;
- and
- discriminating a leak of the package by ellipsometry.
Dependencies are inferred from the claim text.