Sensor, stack-type sensor, and electronic device
AssigneeSony Corporation
InventorsTomoko Katsuhara, Yoshiaki Sakakura, Manami Miyawaki
Life of this patent
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Abstract
A sensor includes a sensor electrode layer including a capacitive sensing unit, a first reference electrode layer provided to face a first surface of the sensor electrode layer, and a first elastic layer that is provided between the first reference electrode layer and the sensor electrode layer, and is configured to be elastically deformed by shear force added in an in-plane direction. At least one of the first reference electrode layer or the first elastic layer includes a first probe portion that is displaced in an in-plane direction in accordance with elastic deformation of the first elastic layer, and changes an electrostatic capacitance of the sensing unit.
Claims20
A sensor comprising:
- a sensor electrode layer including a capacitive sensing unit;
- a first reference electrode layer provided to face a first surface of the sensor electrode layer;
- and
- a first elastic layer that is provided between the first reference electrode layer and the sensor electrode layer, and is configured to be elastically deformed by shear force added in an in-plane direction,
- wherein at least one of the first reference electrode layer or the first elastic layer includes a first probe portion that is displaced in an in-plane direction in accordance with elastic deformation of the first elastic layer, and changes an electrostatic capacitance of the sensing unit, and
- wherein an elasticity degree of the first elastic layer in an in-plane direction is smaller than an elasticity degree of the first elastic layer in a thickness direction.
A sensor comprising:
- a sensor electrode layer including a capacitive sensing unit;
- a first reference electrode layer provided to face a first surface of the sensor electrode layer;
- and
- a first elastic layer that is provided between the first reference electrode layer and the sensor electrode layer, and is configured to be elastically deformed by shear force added in an in-plane direction,
- wherein at least one of the first reference electrode layer or the first elastic layer includes a first probe portion that is displaced in an in-plane direction in accordance with elastic deformation of the first elastic layer, and changes an electrostatic capacitance of the sensing unit;
- a second reference electrode layer provided to face a second surface of the sensor electrode layer;
- and
- a gap layer provided between the second reference electrode layer and the sensor electrode layer.
A sensor comprising:
- a sensor electrode layer including a capacitive sensing unit;
- a first reference electrode layer provided to face a first surface of the sensor electrode layer;
- and
- a first elastic layer that is provided between the first reference electrode layer and the sensor electrode layer, and is configured to be elastically deformed by shear force added in an in-plane direction,
- wherein
- at least one of the first reference electrode layer or the first elastic layer includes a first probe portion that is displaced in an in-plane direction in accordance with elastic deformation of the first elastic layer, and changes an electrostatic capacitance of the sensing unit,
- the first elastic layer includes a first portion having a first permittivity, and a second portion having a second permittivity different from the first permittivity, in an in-plane direction, and
- the first probe portion is the second portion.
Dependencies are inferred from the claim text.