Producing a ribbon or wafer with regions of low oxygen concentration

A method comprising:

• providing a melt in a crucible, wherein the melt includes silicon;
• forming a ribbon floating on the melt using a cold initializer facing an exposed surface of the melt, wherein the ribbon is single crystal silicon;
• pulling the ribbon from the melt at a low angle off the melt surface, wherein the ribbon is formed at a same rate as the pulling;
• and
• separating the ribbon from the melt at a wall of the crucible where a stable meniscus forms, wherein the ribbon has a thickness between a first surface and a second surface from 50 μm to 5 mm after the separating, wherein the second surface faces the melt prior to the separating, wherein the first surface and the second surface are opposite each other, wherein the ribbon includes a first region extending a first depth from the first surface toward the second surface, and wherein the first region has a reduced oxygen concentration relative to a bulk of the ribbon.