Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus and recording medium

A method of manufacturing a semiconductor device, comprising:

• (a) forming a first film which contains carbon on a substrate by supplying a first processing gas to the substrate in a process container;
• (b) forming a second film, which has a material different from a material of the first film, in the process container by supplying a second processing gas into the process container in a state in which the substrate does not exist in the process container;
• and
• (c) forming a third film which contains carbon on the second film formed in the process container by supplying a third processing gas into the process container in the state in which the substrate does not exist in the process container.

A substrate processing apparatus, comprising:

• a process container in which a substrate is processed;
• a first processing gas supply system configured to supply a first processing gas into the process container;
• a second processing gas supply system configured to supply a second processing gas into the process container;
• a third processing gas supply system configured to supply a third processing gas into the process container;
• and
• a controller configured to be capable of controlling the first processing gas supply system, the second processing gas supply system, and the third processing gas supply system so as to perform a process, the process comprising:
• (a) forming a first film which contains carbon on the substrate by supplying the first processing gas to the substrate in the process container;
• (b) forming a second film, which has a material different from a material of the first film, in the process container by supplying the second processing gas into the process container in a state in which the substrate does not exist in the process container;
• and
• (c) forming a third film which contains carbon on the second film formed in the process container by supplying the third processing gas into the process container in the state in which the substrate does not exist in the process container.