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US 11,885,015 B2Granted
Deposition method and deposition apparatus
AssigneeTokyo Electron Limited
InventorsKatsumasa Yamaguchi, Tsubasa Yokoi
Life of this patent
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Abstract
A deposition method includes preparing a substrate having an insulating film formed thereon; forming a molybdenum film on the insulating film by supplying a molybdenum-containing gas and a reducing gas to the substrate; and heat-treating the substrate having the molybdenum film formed on the insulating film, without exposing the substrate to atmospheric air.
Claims10
A deposition method comprising:
- preparing a substrate having an insulating film formed thereon;
- forming a molybdenum film on a surface of the insulating film by supplying a molybdenum-containing gas and a reducing gas to the substrate while the surface of the insulating film is exposed to atmosphere;
- and heat-treating the substrate having the molybdenum film formed on the insulating film, without exposing the substrate to atmospheric air, wherein the molybdenum film is directly formed on the insulating film.
Dependencies are inferred from the claim text.