Transition metal nitride deposition method
AssigneeASM IP Holding B.V.
InventorsElina Färm, Jan Willem Maes, Charles Dezelah, Shinya Iwashita
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AssigneeASM IP Holding B.V.
InventorsElina Färm, Jan Willem Maes, Charles Dezelah, Shinya Iwashita
Estimating the term…
Methods are provided for depositing a transition metal nitride-containing material on a substrate in the field of manufacturing semiconductor devices. Methods according to the current disclosure comprise a cyclic deposition process, in which a substrate is provided in a reaction chamber, an organometallic transition metal precursor is provided to the reaction chamber in a vapor phase, and a nitrogen precursor is provided into the reaction chamber in a vapor phase to form a transition metal nitride on the substrate. A transition metal nitride layer, a semiconductor structure and a device, as well as a deposition assembly for depositing a transition metal nitride on a substrate are further provided.
A method of depositing a transition metal nitride-containing material on a substrate by a cyclic deposition process, the method comprising:
A method of depositing a transition metal nitride-containing material on a substrate by a cyclic deposition process, the method comprising:
Dependencies are inferred from the claim text.