Graphene synthesis
AssigneeCommonwealth Scientific and Industrial Research Organization
InventorsDong Han Seo, Shafique Pineda, Zhao Jun Han, Kostyantyn Ostrikov
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Abstract
The invention relates to methods for the production of high quality graphene. In particular, the invention relates to single-step thermal methods which can be carried out in an ambient-air or vacuum environment using renewable biomass as a carbon source. Specifically, the invention comprises heating a metal substrate and carbon source in a sealed ambient environment to a temperature which produces carbon vapour from the carbon source such that the vapour comes into contact with the metal substrate, maintaining the temperature for a time sufficient to form a graphene lattice and then cooling the substrate at a controlled rate to form a deposited graphene.
Claims16
A method of preparing a deposited graphene in the form of a continuous film comprising the steps of:
- sealing a metal substrate and a carbon source in an ambient environment at ambient temperature to create a sealed ambient environment comprising a sealed ambient atmosphere;
- heating the sealed ambient environment to a temperature which produces carbon vapour from the carbon source such that the carbon vapour comes into contact with a surface of the metal substrate;
- maintaining the temperature at 875° C. or above for a time sufficient to form a graphene lattice and then cooling the metal substrate at a controlled rate to form a deposited graphene continuous film on the surface of the metal substrate that contacts the carbon vapour;
- wherein the carbon source is a liquid or solid biomass, is derived from a biomass, or is a purified biomass;
- wherein the entire carbon source is not in contact with the metal substrate;
- wherein the method is free from the use of compressed or feedstock gases;
- wherein the sealed ambient atmosphere consists of air at atmospheric pressure or a vacuum;
- and
- wherein the metal is a transition metal substrate.
A method of preparing a deposited graphene in the form of a continuous film comprising the steps of:
- sealing a metal substrate and a carbon source in an ambient environment at ambient temperature to create a sealed ambient environment comprising a sealed ambient atmosphere;
- heating the sealed ambient environment to a temperature which produces carbon vapour from the carbon source such that the carbon vapour comes into contact with a surface of the metal substrate;
- maintaining the temperature at 875° C. or above for a time sufficient to form a graphene lattice and then cooling the metal substrate at a controlled rate to form a deposited graphene continuous film on the surface of the metal substrate that contacts the carbon vapour;
- wherein the carbon source is a liquid or solid biomass, is derived from a biomass, or is a purified biomass;
- wherein the entire carbon source is not in contact with the metal substrate;
- wherein the method is free from the use of compressed or feedstock gases;
- wherein the sealed ambient atmosphere consists of air at atmospheric pressure or a vacuum;
- wherein the metal is a transition metal substrate;
- and
- wherein the substrate is cooled at a controlled rate to control the thickness of the deposited graphene.
Dependencies are inferred from the claim text.