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US 11,885,008 B2Granted
Film forming apparatus and method for reducing arcing
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsPo-Wei Wang, Chao-Hsing Lai
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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsPo-Wei Wang, Chao-Hsing Lai
Estimating the term…
Embodiments of the present disclosure provide a substrate processing system. In one embodiment, the system includes a chamber, a target disposed within the chamber, a magnetron disposed proximate the target, a pedestal disposed within the chamber, and a first gas injector disposed at a sidewall of the chamber. The first gas injector includes a first gas channel extending through a body of the first gas injector, the first gas channel has a first gas outlet. The first gas injector also includes a second gas channel extending through the body of the first gas injector, wherein the second gas channel has a second gas outlet. The second gas channel includes a first portion, and a second portion branching off from an end of the first portion, wherein the second portion is disposed at an angle with respect to the first portion, and the first gas injector is operable to rotate about a longitudinal center axis of the body of the first gas injector.
A substrate processing system, comprising:
A gas injector for use in a physical vapor deposition (PVD) chamber, comprising:
A method for processing a substrate, comprising:
Dependencies are inferred from the claim text.