Piezoelectric bulk layers with tilted c-axis orientation and methods for making the same
AssigneeQorvo US, Inc.
InventorsDerya Deniz, Matthew Wasilik, Robert Kraft, John Belsick
Life of this patent
Estimating the term…
Loading patent…
AssigneeQorvo US, Inc.
InventorsDerya Deniz, Matthew Wasilik, Robert Kraft, John Belsick
Estimating the term…
A structure includes a substrate including a wafer or a portion thereof; and a piezoelectric bulk material layer comprising a first portion deposited onto the substrate and a second portion deposited onto the first portion, the second portion comprising an outer surface having a surface roughness (Ra) of 4.5 nm or less. Methods for depositing a piezoelectric bulk material layer include depositing a first portion of bulk layer material at a first incidence angle to achieve a predetermined c-axis tilt, and depositing a second portion of the bulk material layer onto the first portion at a second incidence angle that is smaller than the first incidence angle. The second portion has a second c-axis tilt that substantially aligns with the first c-axis tilt.
A plurality of acoustic resonator structures prepared from a single wafer, the wafer comprising a surface and a piezoelectric bulk material layer deposited onto the surface, the piezoelectric bulk material layer comprising a first portion of a bulk material layer deposited at an off-normal angle of incidence to achieve a desired c-axis tilt and a second portion of the bulk material layer deposited onto the first portion at normal incidence,
A plurality of acoustic resonator structures prepared from a single wafer, the wafer comprising a surface and a piezoelectric bulk material layer deposited onto the surface, the piezoelectric bulk material layer comprising a first portion of a bulk material layer deposited at an off-normal angle of incidence to achieve a desired c-axis tilt and a second portion of the bulk material layer deposited onto the first portion at normal incidence,
A plurality of acoustic resonator structures prepared from a single wafer, the wafer comprising a surface and a piezoelectric bulk material layer deposited onto the surface, the piezoelectric bulk material layer comprising a first portion of a bulk material layer deposited at an off-normal angle of incidence to achieve a desired c-axis tilt and a second portion of the bulk material layer deposited onto the first portion at normal incidence,
Dependencies are inferred from the claim text.