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US 11,884,859 B2Granted
Tungsten chemical mechanical planarization (CMP) with low dishing and low erosion topography
AssigneeVersum Materials US, LLC
InventorsMatthias Stender, Agnes Derecskei, Bradley J. Brennan
Life of this patent
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Abstract
This invention pertains to compositions, methods and systems that can be used in chemical mechanical planarization (CMP) of a tungsten containing semiconductor device. CMP slurries comprising bicyclic amidine additives provide low dishing and low erosion topography.
Claims8
A chemical mechanical planarization (CMP) composition comprising:
- an abrasive;
- an oxidizing agent;
- a bicyclic amidine compound or hydrolyzed derivative;
- and
- a solvent;
- wherein the CMP composition has a pH ranging from 2 through 5;
- wherein
- the abrasive comprises at least one of:
- colloidal silica;
- fumed silica;
- alumina;
- titania;
- ceria;
- zirconia;
- surface modified particles selected from the group consisting of activator-containing particles, composite particles, lattice doped and inorganic oxide particles;
- and cationic or anionic charge-modified particles;
- the oxidizing agent comprises at least one of:
- hydrogen peroxide;
- urea peroxide;
- peroxyformic acid;
- peracetic acid;
- propaneperoxoic acid;
- substituted or unsubstituted butaneperoxoic acid;
- hydroperoxy-acetaldehyde;
- potassium periodate;
- ammonium peroxymonosulfate;
- ferric nitrite;
- KClO4;
- KBrO4;
- and KMnO4;
- and
- the solvent is selected from the group consisting of water, alcohols, ethers, ketones, glycols, organic acids, and combinations thereof.
29 more elements
Dependencies are inferred from the claim text.