Method for manufacturing complex Si-C cathode base units and the base unit made of the method

A method for manufacturing complex Si—C cathode base units, comprising the following steps of:

• Step A:
• pulverizing a graphene block into a plurality of graphene pieces;
• Step B:
• mixing the plurality of graphene pieces with ethanol and first high molecular material, and then they being mixed and agitated to form viscous high molecular graphene recipe gel solution;
• Step C:
• dispersing and pulverizing powders of silicon, and silicon oxide (SiOx) into a plurality of complex monomers which are formed of nanometer scaled silicon powders and silicon oxide powders;
• and then the complex monomers being mixed with the high molecular graphene recipe gel solution so as to form as Si—C solution;
• Step D:
• spraying and drying the Si—C solution, that is:
• the Si—C solution is sprayed out to form micro particles and then the micro particles are dried so as to evaporate the ethanol in the Si—C solution to form with first order Si—C nanoparticles;
• wherein each first Si—C nanoparticles includes the plurality of graphene pieces, the plurality of complex monomers and the first high molecular material;
• the first high molecular material is used as viscosity for combining the plurality of graphene pieces and the plurality of complex monomers;
• a plurality of buffer spaces are formed in the plurality of graphene pieces, the first high molecular material and the nanometer scale complex monomers for receiving expansions of the complex monomers;
• Step E:
• mixing first order SIC nanoparticles, second high molecular material, and a small amount of nanometer carbon tubes and then calcined them;
• or mixing and calcining the first order SIC nanoparticles and the second high molecular material firstly and then they being further mixed with the nanometer carbon tubes;
• Step F:
• the first order SiC nanoparticles, the second high molecular material and the nanometer carbon tubes being shaped or being sprayed and dried so as to form as second order SiC nanoparticles;
• and
• Step G:
• calcining the second order SiC nanoparticles in a calcination oven so as to form as third order SIC nanoparticles which is the complex Si—C based unit.