Wafer processing apparatus and method of manufacturing semiconductor device using the same
AssigneeSamsung Electronics Co., Ltd.
InventorsYoungchul Kwon, Manhee Han
Life of this patent
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Abstract
A wafer processing apparatus includes: a laser apparatus configured to generate a laser beam; a focusing lens optical system configured to focus the laser beam on an inside of a wafer; an arbitrary wave generator configured to supply driving power to the laser apparatus; and a controller configured to control the arbitrary wave generator, wherein the laser beam includes a plurality of pulses sequentially emitted from the laser apparatus, and wherein each of the plurality of pulses is a non-Gaussian pulse, and a full width at half maximum (FWHM) of each of the plurality of pulses ranges from 1 ps to 500 ns.
Claims20
A wafer processing apparatus comprising:
- a laser apparatus configured to generate a laser beam;
- a focusing lens optical system configured to focus the laser beam on an inside of a wafer;
- an arbitrary wave generator configured to supply driving power to the laser apparatus;
- and
- a controller configured to control the arbitrary wave generator,
- wherein the laser beam comprises a plurality of pulses sequentially emitted from the laser apparatus, and
- wherein each of the plurality of pulses is a non-Gaussian pulse, and a full width at half maximum (FWHM) of each of the plurality of pulses ranges from 1 ps to 500 ns.
A wafer processing apparatus configured to perform a stealth dicing process on a wafer, the wafer processing apparatus comprising:
- a laser apparatus configured to output a laser beam comprising a plurality of non-Gaussian pulses;
- focusing lens optics configured to focus the laser beam on an inside of the wafer;
- and
- an arbitrary wave generator configured to provide non-sinusoidal continuous wave power to the laser apparatus.
A wafer processing apparatus comprising:
- a laser apparatus configured to generate a laser beam;
- focusing lens optics configured to focus the laser beam on an inside of a wafer;
- an arbitrary wave generator configured to supply driving power to the laser apparatus;
- and
- a controller configured to control the arbitrary wave generator,
- wherein the laser beam comprises a plurality of pulses sequentially emitted from the laser apparatus, and
- wherein a rise time taken for an intensity of each of the plurality of pulses to rise from 10% of a peak point to 90% of the peak point is 1% or more of a full width at half maximum (FWHM) of each of the plurality of pulses and less than 50% of the FWHM.
Dependencies are inferred from the claim text.