Surface-emitting semiconductor light-emitting device

A surface-emitting semiconductor light-emitting device, comprising:

• a first semiconductor layer of a first conductivity type;
• an active layer provided on the first semiconductor layer;
• a photonic crystal layer provided on the active layer, the photonic crystal layer including a first region and a second region surrounding the first region, the photonic crystal layer including a plurality of protrusions arranged along an upper surface of the active layer, the plurality of protrusions including a plurality of first protrusions in the first region and a plurality of second protrusions in the second region, a first spacing of adjacent first protrusions among the plurality of first protrusions being greater than a second spacing of adjacent second protrusions among the plurality of second protrusions;
• and
• a second semiconductor layer provided on the photonic crystal layer, the second semiconductor layer being of the first conductivity type, the second semiconductor layer including a first layer and a second layer on the first layer, a first-conductivity-type impurity concentration in the first layer being less than a first-conductivity-type impurity concentration in the second layer,
• the first layer covering the plurality of protrusions, the first layer covering the plurality of first protrusions so that a first space remains between the adjacent first protrusions, the first layer including a first portion provided between the adjacent second protrusions, the first portion of the first layer having a width in a first direction along the upper surface of the active layer, the width of the first portion being same as the second spacing between the second protrusions adjacent in the first direction,
• the second layer including a second portion provided between the adjacent first protrusions, the first space between the adjacent first protrusions being filled with the second portion of the second layer.