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US 11,876,131 B2Granted
Semiconductor device
AssigneeFuji Electric Co., Ltd.
InventorsYuichi Hashizume, Keishirou Kumada, Yoshihisa Suzuki, Yasuyuki Hoshi
Life of this patent
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Abstract
A source pad of a main semiconductor element is electrically connected to an n+-type source region via a barrier metal. A temperature sensing part is a poly-silicon diode formed by a pn junction between a p-type poly-silicon layer that is a p-type anode region and an n-type poly-silicon layer that is an n-type cathode region. The temperature sensing part is provided, via the field insulating film, on a front surface of a same semiconductor substrate as the main semiconductor element. An anode pad and a cathode pad are in direct contact with the p-type poly-silicon layer and the n-type poly-silicon layer, respectively. The source pad, the anode pad, and the cathode pad are aluminum alloy films.
Claims8
A semiconductor device, comprising:
- a semiconductor substrate of a first conductivity type including a semiconductor material having a bandgap that is wider than that of silicon;
- a second-conductivity-type region of a second conductivity type provided in a surface layer of a first main surface of the semiconductor substrate;
- a barrier metal disposed on the second-conductivity-type region;
- an insulated-gate field effect transistor with a trench gate structure, including a base region and a source pad, the base region comprising the second-conductivity-type region, the source pad being electrically connected to the second-conductivity-type region via the barrier metal;
- an insulating layer disposed on the semiconductor substrate;
- a second-conductivity-type poly-silicon layer of the second conductivity type provided on the first main surface of the semiconductor substrate, via the insulating layer;
- a first-conductivity-type poly-silicon layer of the first conductivity type provided on the first main surface of the semiconductor substrate next to the second-conductivity-type poly-silicon layer, via the insulating layer, a side face of the first-conductivity-type poly-silicon layer being in contact with a side face of the second-conductivity-type poly-silicon layer;
- and
- a diode formed by a pn junction between the second-conductivity-type poly-silicon layer and the first-conductivity-type poly-silicon layer, the diode including an anode pad and a cathode pad, the anode pad being electrically connected to and in direct contact with the second-conductivity-type poly-silicon layer, the cathode pad being electrically connected to the first-conductivity-type poly-silicon layer, wherein
- the source pad is a metal film containing aluminum as a main constituent,
- the anode pad is a metal film containing aluminum as a main constituent, the metal film of the anode pad being made of a single layer, being in direct contact with the second-conductivity-type poly-silicon layer and being free of any barrier metal,
- the cathode pad is a metal film containing aluminum as a main constituent, the metal film of the cathode pad being made of a single layer, being in direct contact with the first-conductivity-type poly-silicon layer and being free of any barrier metal, and
- the source pad is apart from the anode pad and the cathode pad in a plan view of the semiconductor device.
10 more elements
A semiconductor device, comprising:
- a semiconductor substrate of a first conductivity type including a semiconductor material having a bandgap that is wider than that of silicon;
- a second-conductivity-type region of a second conductivity type provided in a surface layer of a first main surface of the semiconductor substrate;
- a barrier metal disposed on the second-conductivity-type region;
- an insulated-gate field effect transistor with a trench gate structure, including a base region and a source pad, the base region comprising the second-conductivity-type region, the source pad being electrically connected to the second-conductivity-type region via the barrier metal;
- an insulating layer disposed on the semiconductor substrate;
- and
- one or more circuit parts for protecting or controlling the insulated-gate field effect transistor, the one or more circuit parts being provided on the semiconductor substrate and including:
- a poly-silicon layer provided on the first main surface of the semiconductor substrate via the insulating layer, and
- an electrode pad electrically connected to and in direct contact with the poly-silicon layer, wherein
- the source pad is a metal film containing aluminum as a main constituent,
- the electrode pad is a metal film containing aluminum as a main constituent, the metal film of the electrode pad being made of a single layer, being in direct contact with the poly-silicon layer and being free of any barrier metal, and
- the source pad is apart from the electrode pad in a plan view of the semiconductor device.
9 more elements
A semiconductor device, comprising:
- a semiconductor substrate of a first conductivity type including a semiconductor material having a bandgap that is wider than that of silicon;
- a second-conductivity-type region of a second conductivity type provided in a surface layer of a first main surface of the semiconductor substrate;
- a barrier metal disposed on the second-conductivity-type region;
- an insulated-gate field effect transistor with a trench gate structure having a gate electrode, including a base region, a source pad and a gate pad, the base region comprising the second-conductivity-type region, the source pad being electrically connected to the second-conductivity-type region via the barrier metal, the gate pad being electrically connected to the gate electrode;
- an insulating layer disposed on the semiconductor substrate;
- a second-conductivity-type poly-silicon layer of the second conductivity type provided on the first main surface of the semiconductor substrate, via the insulating layer;
- a first-conductivity-type poly-silicon layer of the first conductivity type provided on the first main surface of the semiconductor substrate next to the second-conductivity-type poly-silicon layer, via the insulating layer, a side face of the first-conductivity-type poly-silicon layer being in contact with a side face of the second-conductivity-type poly-silicon layer;
- and
- a diode formed by a pn junction between the second-conductivity-type poly-silicon layer and the first-conductivity-type poly-silicon layer, the diode including an anode pad and a cathode pad, the anode pad being electrically connected to and in direct contact with the second-conductivity-type poly-silicon layer, the cathode pad being electrically connected to the first-conductivity-type poly-silicon layer, wherein
- the source pad is a metal film containing aluminum as a main constituent,
- the anode pad is a metal film containing aluminum as a main constituent, the metal film of the anode pad being made of a single layer, being in direct contact with the second-conductivity-type poly-silicon layer and being free of any barrier metal, and
- the gate pad is apart from the anode pad and the cathode pad in a plan view of the semiconductor device.
9 more elements
Dependencies are inferred from the claim text.