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US 11,876,072 B2Granted
Method for preparing semiconductor device with wire bond
AssigneeNanya Technology Corporation
InventorsWei-Zhong Li, Yi-Ting Shih, Chien-Chung Wang, Hsih-Yang Chiu
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Abstract
A method for preparing a semiconductor device includes providing an integrated circuit die having a bond pad. The bond pad includes aluminum (Al). The method also includes etching a top portion of the bond pad to form a recess, and bonding a wire bond to the recess in the bond pad. The wire bond includes copper (Cu).
Claims6
A method for preparing a semiconductor device, comprising:
- providing an integrated circuit die having a bond pad;
- forming a first dielectric layer over the bond pad;
- forming a second dielectric layer over the first dielectric layer;
- etching the first dielectric layer and the second dielectric layer to form a first opening exposing a top surface area of the bond pad;
- partially recessing the top surface area of the bond pad to form a concave depression;
- bonding a wire bond to the concave depression;
- forming a first photoresist layer over the second dielectric layer, wherein the first opening is formed by using the first photoresist layer as a mask;
- and
- forming a second photoresist layer over the first photoresist layer before the concave depression is formed.
6 more elements
Dependencies are inferred from the claim text.