Semiconductor devices including a support pattern on a lower electrode structure

A semiconductor device comprising:

• a substrate;
• a lower electrode on the substrate, the lower electrode including a first portion and a second portion that is on the first portion;
• a support pattern arranged adjacent to the second portion of the lower electrode;
• a dielectric layer on the lower electrode;
• and
• an upper electrode on the dielectric layer,
• wherein the first portion of the lower electrode includes a first lower electrode pattern and a second lower electrode pattern that is on the first lower electrode pattern,
• wherein the second portion of the lower electrode includes a third lower electrode pattern,
• wherein the first lower electrode pattern of the first portion of the lower electrode is the same material as that of the third lower electrode pattern of the second portion of the lower electrode,
• wherein the third lower electrode pattern of the second portion of the lower electrode contacts the support pattern,
• wherein the first lower electrode pattern of the first portion of the lower electrode is spaced apart from the support pattern, and
• wherein a width of the first portion of the lower electrode in a direction that is parallel to a top surface of the substrate is greater than a width of the second portion of the lower electrode in the direction.

A semiconductor device comprising:

• a substrate;
• a lower electrode on the substrate, the lower electrode including a first lower electrode pattern, a second lower electrode pattern that is on the first lower electrode pattern, and a third lower electrode pattern that is on a side surface of the first lower electrode pattern;
• a support pattern arranged adjacent to the second lower electrode pattern of the lower electrode;
• a dielectric layer on the lower electrode;
• and
• an upper electrode on the dielectric layer,
• wherein the support pattern contacts a first portion of a sidewall of the second lower electrode pattern of the lower electrode,
• wherein an extension portion of the third lower electrode pattern of the lower electrode is on a second portion of the sidewall and a top surface of the second lower electrode pattern of the lower electrode, and
• wherein each of the third lower electrode pattern and the extension portion of the third lower electrode pattern of the lower electrode is selected from the group consisting of niobium oxide (NbO), niobium nitride (NbN), and niobium oxynitride (NbON).