Electrochromic multi-layer devices with current modulating structure
AssigneeHalio, Inc.
InventorsHoward S. Bergh, Jonathan Ziebarth, Nicolas Timmerman
Life of this patent
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Abstract
A multi-layer device comprising a first substrate, a first electrically conductive layer on a surface thereof, and a first current modulating layer, the first electrically conductive layer having a sheet resistance to the flow of electrical current through the first electrically conductive layer that varies as a function of position.
Claims19
An electrochromic device comprising a first substrate, a first electrically conductive layer, a first current modulating structure, a first electrode layer, a second electrically conductive layer and a second substrate, the first current modulating structure being between the first electrically conductive layer and the first electrode layer, the first current modulating structure comprising a first cross-layer resistance that varies as a function of position in the first current modulating structure, wherein a first contour map of the first cross-layer resistance as a function of position within the first current modulating structure contains a first set of isoresistance lines and a first set of resistance gradient lines normal to the first set of isoresistance lines, and the first cross-layer resistance along a gradient line in the first set of gradient lines generally increases, generally decreases, generally increases until it reaches a maximum and then generally decreases, or generally decreases until it reaches a minimum and then generally increases.
A process for the preparation of a multi-layer device comprising forming a multi-layer layer structure comprising an electrochromic layer between and in electrical contact with a first and a second electrically conductive layer, and a first current modulating structure between the first electrically conductive layer and the electrochromic layer, the first current modulating structure comprising a cross-layer resistance, RC, that varies as a function of position in the first current modulating structure, wherein a first contour map of the cross-layer resistance, RC, as a function of position within the first current modulating structure contains a first set of isoresistance lines and a first set of resistance gradient lines normal to the first set of isoresistance lines, and the cross-layer resistance, RC, along a gradient line in the first set of gradient lines generally increases, generally decreases, generally increases until it reaches a maximum and then generally decreases, or generally decreases until it reaches a minimum and then generally increases.
Dependencies are inferred from the claim text.