Semiconductor layer stack and method for producing same
AssigneesOtto-Von-Guericke-Universitaet Magdeburg, AZUR SPACE Solar Power GmbH
InventorsArmin Dadgar, André Strittmatter
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Abstract
A semiconductor layer stack, a component made therefrom, a component module, and a production method is provided. The semiconductor layer stack has at least two layers (A, B), which, as individual layers, each have an energy position of the Fermi level in the semiconductor band gap, E F - E V < E G 2 applying to the layer (A) and E L - E F < E G 2 applying to the layer (B), with EF the energy position of the Fermi level, EV the energy position of the valence band, EL the energy position of a conduction band and EL−EV the energy difference of the semiconductor band gap EG, the thickness of the layers (A, B) being selected in such a way that a continuous space charge zone region over the layers (A, B) results.
Claims15
A semiconductor layer stack comprising:
- a succession of at least two layer packets, comprising at least a layer A and a layer B, which, as individual layers, each having an energy position of the Fermi level in the semiconductor band gap of applying to the layer A and applying to the layer B, with EF being the energy position of the Fermi level, EV the energy position of a valence band, EL the energy position of a conduction band and EL−EV the energy difference of the semiconductor band gap,
- wherein a thickness of the layers A and B is selected such that a continuous space charge zone region over the layers A and B results,
- wherein the layer A comprises a deep acceptor,
- wherein the layer B comprises a shallow donor, and
- wherein a concentration of the acceptor is greater than a concentration of the donor and a highly-doped layer having a deep acceptor is arranged in each case at the end of the semiconductor stack or the two layers A and B comprise a deep donor and a shallow acceptor or only a shallow donor and a shallow acceptor or a deep donor and a deep acceptor.
A semiconductor layer stack comprising:
- a succession of at least two layer packets, comprising a layer A and a layer B, which, as individual layers, each has an energy position of the Fermi level in the semiconductor band gap of applying to the layer A and applying to the layer B, with EF being the energy position of the Fermi level, EV the energy position of a valence band, EL the energy position of a conduction band and EL−EV the energy difference of the semiconductor band gap;
- and
- a highly-doped layer having a deep acceptor is arranged at an end of the semiconductor stack,
- wherein a thickness of the layers A and B is selected such that a continuous space charge zone region over the layers A and B results,
- wherein the layer A comprises a deep acceptor,
- wherein the layer B comprises a shallow donor, and
- wherein a concentration of the acceptor is greater than a concentration of the donor.
A semiconductor layer stack comprising:
- a succession of at least two layer packets, comprising at least a layer A and a layer B, which, as individual layers, each having an energy position of the Fermi level in the semiconductor band gap of applying to the layer A and applying to the layer B, with EF being the energy position of the Fermi level, EV the energy position of a valence band, EL the energy position of a conduction band and EL−EV the energy difference of the semiconductor band gap,
- wherein a thickness of the layers A and B is selected such that a continuous space charge zone region over the layers A and B results,
- wherein the layer A comprises a deep acceptor, and
- wherein the layer B comprises a shallow donor.
Dependencies are inferred from the claim text.