Semiconductor laser device and method for manufacturing the same

A semiconductor laser device comprising:

• a substrate;
• and
• a semiconductor layer provided on the substrate and including a first conductivity type contact layer,
• wherein a mesa is provided in the semiconductor layer and includes a resonator and a second conductivity type contact layer,
• grooves are provided on opposing sides of the mesa,
• a top surface of the first conductivity type contact layer and a side face of the mesa including at least one end face of the resonator construct an L shape,
• the top surface of the first conductivity type contact layer constructs a bottom surface of the L shape,
• for each of the grooves, a side face of the groove includes a first slope near the bottom surface of the groove and a first side face above the first slope, the first side face being substantially perpendicular to the bottom surface of the groove,
• a side face of the L shape includes a second slope near the bottom surface of the L shape and a second side face above the second slope, the second side face being substantially perpendicular to the bottom surface of the L shape,
• a first electrode is connected to the first conductivity type contact layer and the first electrode is positioned directly on the bottom surface of at least one of the grooves,
• a second electrode is connected to the second conductivity type contact layer,
• the first conductivity type contact layer forms the bottom surfaces of the grooves,
• the first side face and the second side face being formed by dry etching until a portion of the first conductivity type contact layer is exposed, and
• the first slope and the second slope being formed by wet etching after the dry etching.