Multilevel semiconductor device and structure with image sensors and wafer bonding

An integrated device, the device comprising:

• a first level comprising a first mono-crystal layer, said first mono-crystal layer comprising a plurality of single crystal transistors;
• an overlying oxide disposed on top of said first level;
• and
• a second level comprising a second mono-crystal layer, said second level overlaying said oxide,
• wherein said second mono-crystal layer comprises a plurality of image sensors,
• wherein said second level is bonded to said first level with an oxide to oxide bond;
• wherein said integrated device comprises a plurality of memory circuits, and
• wherein said integrated device comprises a plurality of recessed channel transistors.

An integrated device, the device comprising:

• a first level comprising a first mono-crystal layer, said first mono-crystal layer comprising a plurality of single crystal transistors;
• an overlying oxide disposed on top of said first level;
• and
• a second level comprising a second mono-crystal layer, said second level overlaying said oxide,
• wherein said second mono-crystal layer comprises a plurality of image sensors,
• wherein said second level is bonded to said first level with an oxide to oxide bond;
• and
• wherein said integrated device comprises a plurality of memory circuits.