Back to results
US 11,866,848 B1Granted
Method and system for liquid encapsulated growth of cadmium zinc telluride crystals
AssigneeDRS Network & Imaging Systems, LLC
InventorsLance Robertson, Luigi Colombo, Victor Perez-Rubio, Tim Svoboda, Fred Raymel Harris, Kathryn O'Brien
Life of this patent
Estimating the term…
Abstract
A method of growing a cadmium zinc telluride (CdZnTe) crystal includes providing a crucible including a solid CdZnTe source and forming a Te-rich Cd—Zn—Te melt on the solid CdZnTe source. The method also includes positioning a CdZnTe seed crystal in physical contact with the Te-rich Cd—Zn—Te melt and growing the CdZnTe crystal from the Te-rich Cd—Zn—Te melt.
Claims16
A method of growing a cadmium zinc telluride (CdZnTe) crystal, the method comprising:
- providing a crucible including a solid CdZnTe source;
- forming a Te-rich Cd—Zn—Te melt on the solid CdZnTe source, wherein the Te-rich Cd—Zn—Te melt floats on the solid CdZnTe source;
- positioning a CdZnTe seed crystal in physical contact with the Te-rich Cd—Zn—Te melt;
- and
- growing the CdZnTe crystal from the Te-rich Cd—Zn—Te melt.
2 more elements
A method of cooling a CdZnTe crystal, the method comprising:
- melting an upper surface of a solid CdZnTe source to form a Te-rich Cd—Zn—Te melt floating on the solid CdZnTe source;
- growing the CdZnTe crystal from a CdZnTe seed crystal in physical contact with the Te-rich Cd—Zn—Te melt, wherein the Te-rich Cd—Zn—Te melt is at least partially encapsulated by an encapsulating layer;
- lifting the CdZnTe crystal into the encapsulating layer;
- and
- cooling the CdZnTe crystal to a temperature greater than the solidification temperature of the encapsulating layer.
2 more elements
Dependencies are inferred from the claim text.