Radiation resistant circuit device, pressure transmission device, and nuclear power plant measurement system

A radiation resistant circuit device, comprising:

• a SiC semiconductor element equipped with a SiC integrated circuit;
• a printed board on which the SiC semiconductor element is provided;
• a conductive wiring and a covering material that are arranged inside the printed board, the conductive wiring having a predetermined surface facing a bottom surface of a substrate electrode of the SiC integrated circuit;
• and
• an insulating material arranged between the bottom surface of the substrate electrode of the SiC integrated circuit and the predetermined surface of the conductive wiring;
• wherein a parasitic capacitance is formed via the insulating material and the covering material between the bottom surface of the substrate electrode of the SiC integrated circuit and the conductive wiring.