Field-effect transistors with a crystalline body embedded in a trench isolation region
AssigneeGlobalFoundries U.S. Inc.
InventorsSteven M. Shank, Siva P. Adusumilli, Alvin Joseph
Life of this patent
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Abstract
Structures for a field-effect transistor and methods of forming a structure for a field-effect transistor. The structure includes a semiconductor substrate having a first trench, and a trench isolation region positioned in the first trench. The trench isolation region contains a dielectric material, the trench isolation region includes a second trench surrounded by the dielectric material, and the trench isolation region includes openings that penetrate through the dielectric material. A semiconductor layer is positioned in the second trench of the trench isolation region. The semiconductor layer contains a single-crystal semiconductor material.
Claims20
A structure comprising:
- a semiconductor substrate including a device layer, a buried insulator layer, a handle substrate separated from the device layer by the buried insulator layer, and a first trench that penetrates through the device layer and the buried insulator layer into the handle substrate;
- a trench isolation region positioned in the first trench, the trench isolation region comprising a dielectric material, the trench isolation region including a second trench surrounded by the dielectric material, and the trench isolation region including a plurality of openings that penetrate through the dielectric material to the handle substrate;
- and
- a semiconductor layer positioned in the second trench of the trench isolation region, the semiconductor layer comprising a single-crystal semiconductor material.
A method comprising:
- forming a trench isolation region in a first trench in a semiconductor substrate, wherein the semiconductor substrate includes a device layer, a buried insulator layer, and a handle substrate separated from the device layer by the buried insulator layer, and the first trench penetrates through the device layer and the buried insulator layer into the handle substrate;
- forming a second trench in the trench isolation region that is surrounded by a dielectric material of the trench isolation region;
- forming a plurality of openings that penetrate through the dielectric material to the handle substrate;
- and
- forming a semiconductor layer positioned in the second trench of the trench isolation region, wherein the semiconductor layer comprises a single-crystal semiconductor material.
Dependencies are inferred from the claim text.