Pattern formation method and template manufacturing method

A patterning method, comprising:

• obtaining a first imprint template including a line and space pattern formed by a side wall transfer process, the line and space pattern including a first loop end portion at one end and a second loop end portion at another end;
• performing an imprint lithography process on a substrate using the first imprint template to transfer the line and space pattern to an imprint resist on the substrate;
• after the imprint lithography process, radiation hardening a portion of the imprint resist between the first loop end portion and the second loop end portion;
• etching the imprint resist to remove the portions of the imprint resist that were not radiation hardened and leave the portions of the imprint resist that were radiation hardened;
• and
• etching the substrate using the remaining portions of the radiation hardened imprint resist as a mask.

A template manufacturing method, comprising:

• forming a hard mask film on a substrate;
• forming a resist film on the hard mask film;
• patterning the resist film to have a pattern including a first loop section in a first end portion of a line-space pattern and a second loop section in a second end portion of the line-space pattern;
• irradiating the resist between the first loop section and the second loop section;
• removing the portions of the resist not irradiated;
• and
• etching the mask film and the substrate using the remaining resist film.