Semiconductor devices, hybrid transistors, and related methods
AssigneeMicron Technology, Inc.
InventorsKamal M. Karda, Haitao Liu, Durai Vishak Nirmal Ramaswamy
Life of this patent
Estimating the term…
Abstract
Methods of forming a semiconductor device are disclosed. A method comprising forming a hybrid transistor supported by a substrate. Forming the hybrid transistor comprises forming a source including a first low bandgap high mobility material, and forming a channel including a high bandgap low mobility material coupled with the first low bandgap high mobility material. Forming the hybrid transistor further comprises forming a drain including a second low bandgap high mobility material coupled with the a high bandgap low mobility material, and forming a gate separated from the channel via a gate oxide material. Methods of forming a transistor are also disclosed.
Claims18
A method of forming a semiconductor device, the method comprising:
- forming a hybrid transistor supported by a substrate comprising:
- forming a source including a first low bandgap high mobility material;
- forming a channel including a high bandgap low mobility material coupled with the first low bandgap high mobility material;
- forming a drain including a second low bandgap high mobility material coupled with the high bandgap low mobility material;
- and
- forming a gate separated from the channel via a gate oxide material,
- wherein forming the channel includes forming the high bandgap low mobility material to have a length that is shorter than a length of the gate.
A method of forming a transistor, the method comprising:
- forming a source region including at least a first low bandgap high mobility material;
- forming a channel region including at least a high bandgap low mobility material adjacent the first low bandgap high mobility material;
- and
- forming a drain region including at least a second low bandgap high mobility material adjacent the high bandgap low mobility material,
- wherein forming the channel region further comprises forming the channel region including a third low bandgap high mobility material.
A method of forming a semiconductor device, the method comprising:
- forming a transistor comprising:
- forming a source including at least a first low bandgap high mobility material;
- forming a channel including another low bandgap high mobility material disposed between opposing portions of a high bandgap low mobility material and coupled to the first low bandgap high mobility material;
- and
- forming a drain including at least a second low bandgap high mobility material coupled to a portion of high bandgap low mobility material.
Dependencies are inferred from the claim text.