Sensors and electronic devices

A sensor, comprising:

• a first electrode and a second electrode;
• and
• a photo-active layer between the first electrode and the second electrode, the photo-active layer including a light absorbing semiconductor,
• wherein the photo-active layer has a charge carrier trapping site configured to capture photo-generated charge carriers generated based on the light absorbing semiconductor absorbing incident light, and
• wherein the light absorbing semiconductor includes one of a p-type non-polymeric semiconductor or an n-type non-polymeric semiconductor,
• wherein the photo-active layer at least partially defines a mono-continuous phase including the one of the p-type non-polymeric semiconductor or the n-type non-polymeric semiconductor.

A sensor, comprising:

• a semiconductor substrate;
• a first electrode and a second electrode;
• and
• a photo-active layer between the first electrode and the second electrode, the photo-active layer including a light absorbing semiconductor,
• wherein the photo-active layer has a charge carrier trapping site configured to capture photo-generated charge carriers generated based on the light absorbing semiconductor absorbing incident light, and
• wherein the light absorbing semiconductor includes one of
• a p-type monomer having a molecular weight of less than or equal to about 5000 Daltons and greater than 0 Daltons, or
• an n-type monomer having a molecular weight of less than or equal to about 5000 Daltons and greater than 0 Daltons,
• wherein the semiconductor substrate includes a charge storage electrically connected to the second electrode.