Manufacturing method for image sensor structure
AssigneeShanghai Ic R&D Center Co., Ltd
InventorXiaoxu Kang
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Abstract
The present disclosure relates to an image sensor structure and a manufacturing method thereof. A detection structure layer and a blind pixel structure layer are used. The detection structure layer and the blind pixel structure layer are effectively combined and further formed by ion implantation. Thus, the space ratio of a single pixel is reduced, the integration and device sensitivity are improved, and the blind pixel array and the pixel array are also in the same environment, thereby further improving the detection sensitivity and reducing the detection error.
Claims12
A manufacturing method for an image sensor structure, comprising the process of preparing an effective pixel array, wherein the preparing method of each effective pixel comprises:
- forming a first conductivity type sensitive material layer as a detection structure layer, and forming a second conductivity type non-sensitive material layer as a blind pixel structure layer;
- wherein a first end of the detection structure layer and a first end of the blind pixel structure layer are jointly connected to a first shared extraction electrode, and a second end of the detection structure layer and a second end of the blind pixel structure layer are respectively connected to a second extraction electrode and a third extraction electrode.
Dependencies are inferred from the claim text.