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US 11,854,874 B2Granted
Metal contact structure and method of forming the same in a semiconductor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYu-Hung Lin, Sheng-Hsuan Lin, Chih-Wei Chang, You-Hua Chou
Life of this patent
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Abstract
A semiconductor device and method of formation are provided. The semiconductor device comprises a silicide layer over a substrate, a metal plug in an opening defined by a dielectric layer over the substrate, a first metal layer between the metal plug and the dielectric layer and between the metal plug and the silicide layer, a second metal layer over the first metal layer, and an amorphous layer between the first metal layer and the second metal layer.
Claims19
A method comprising:
- forming a dielectric layer over a substrate, the dielectric layer comprising an opening exposing a surface of the substrate;
- depositing a first metal layer in the opening, the first metal layer comprising at least one of cobalt or nickel;
- depositing a second metal layer over the first metal layer, the second metal layer comprising at least one of tantalum or titanium;
- depositing a third metal layer over the second metal layer, the third metal layer comprising at least one of cobalt or ruthenium;
- depositing a conductive fill material over the third metal layer and filling the opening, the conductive fill material comprising copper;
- planarizing the conductive fill material, the third metal layer, the second metal layer, and the first metal layer;
- and
- after the planarizing, performing a thermal treatment to form a silicide between the substrate and the first metal layer and an amorphous layer between the first metal layer and the second metal layer, wherein the amorphous layer comprises nickel-tantalum.
5 more elements
A method comprising:
- depositing a dielectric layer over a silicon substrate;
- forming an opening in the dielectric layer exposing a portion of the silicon substrate;
- depositing a first metal layer in the opening and over the exposed portion of the silicon substrate, the first metal layer comprising cobalt;
- depositing a second metal layer over the first metal layer, the second metal layer comprising titanium;
- depositing a third metal layer over the second metal layer, the third metal layer comprising ruthenium;
- depositing a conductive fill material over the third metal layer, the conductive fill material comprising copper;
- and
- performing a thermal treatment on the first metal layer and the second metal layer, the thermal treatment forming a cobalt silicide layer in the silicon substrate, the thermal treatment further forming a cobalt-titanium layer between the first metal layer and the second metal layer.
5 more elements
A method of forming a semiconductor device, comprising:
- forming a first metal layer in an opening defined in a dielectric layer over a substrate;
- forming a second metal layer in the opening over the first metal layer;
- forming a third metal layer in the opening over the second metal layer;
- forming a metal plug in the opening over the third metal layer;
- and
- annealing the semiconductor device to react the first metal layer with the second metal layer to form an amorphous layer there-between and to form a silicide layer between the first metal layer and the substrate, the amorphous layer comprising Ni—Ta.
3 more elements
Dependencies are inferred from the claim text.