System and method for performing spin dry etching

A dry etching apparatus, comprising:

• a dry etching chamber;
• a plasma power generator;
• a holder apparatus configured to hold an object to be dry etched, the object corresponding to an individual mask or an individual wafer, wherein the holder apparatus contains a lateral recess that is configured for a horizontal insertion of the object, wherein the lateral recess is defined at least in part by a laterally-protruding clamp that is positioned above the object after the object is inserted into the lateral recess, wherein the holder apparatus contains an elastic buffer component that is disposed in the lateral recess and configured to make contact with a side surface of the object, and wherein the laterally-protruding clamp is vertically movable between a first position where the object is inserted into the recess and a second position, such that the laterally-protruding clamp is capable of making physical contact with an upper surface of a portion of the object after the object is inserted into the lateral recess or with an upper surface of the elastic buffer component and wherein the first position is no taller than an uppermost surface of the holder apparatus;
• and
• a controller configured to instruct the dry etching apparatus to perform at least the following operations sequentially:
• beginning a rotation of the holder apparatus according to a central axis of the holder apparatus while the object is held by the holder apparatus;
• powering on the plasma power generator to generate plasma;
• and
• beginning an etching of the object while the holder apparatus is continuously rotated at a rate between 20 revolution-per-minute (RPM) and 50 RPM as the holder apparatus is rotated alternatingly between a clockwise direction and a counterclockwise direction, wherein the plasma is distributed throughout the dry etching chamber at least in part via the rotation of the holder apparatus, and wherein the lateral recess restricts a horizontal movement and a vertical movement of the object while the holder apparatus is rotated.

A semiconductor fabrication system, comprising:

• a dry etching chamber in which a dry etching process is performed;
• a plasma generator configured to generate plasma;
• a holder apparatus having a horizontally-facing slot that is configured for horizontal insertion of an etchable object therein, the etchable object including an individual photomask or an individual wafer, wherein the horizontally-facing slot is defined at least in part by a horizontally-protruding clamp that is positioned above a portion of the etchable object after the etchable object is inserted into the horizontally-facing slot, wherein the horizontally-protruding clamp is vertically movable between a first position that is no taller than an uppermost surface of the holder apparatus and a second position in which the horizontally-protruding clamp makes physical contact with the etchable object;
• an elastic buffer located within the horizontally-facing slot of the holder apparatus, wherein the elastic buffer is configured to make direct contact with a side surface of the etchable object when the etchable object has been inserted into the horizontally-facing slot;
• and
• a controller that is communicatively coupled to the holder apparatus, wherein the controller is configured to send instructions to the dry etching chamber, the plasma generator, and the holder apparatus to perform the following steps in order:
• beginning spinning the holder apparatus about a central axis of the holder apparatus while the object is secured to the holder apparatus;
• powering on the plasma generator to generate the plasma;
• and
• starting the dry etching process, wherein the object is etched by the dry etching process while the spinning of the holder apparatus causes the plasma to be distributed throughout the dry etching chamber, and wherein the holder apparatus is spun at a rate between 20 revolution-per-minute (RPM) and 50 RPM and alternatingly between a clockwise direction and a counterclockwise direction;
• wherein an insertion of the etchable object into the horizontally-facing slot of the holder apparatus restricts a movement of the etchable object while the holder apparatus is being spun as the dry etching process is performed.