Backscattered electron detector, apparatus of charged-particle beam such as electron microscope comprising the same, and method thereof

Abstract

The present invention provides a backscattered electron (BSE) detector comprising two or more detection components that are electrically isolated from each other. Each of the detection components includes a single continuous top metal layer configured for directly receiving incident backscattered electrons and for backscattered electron to penetrate therethrough. The thickness of one of the top metal layers is different from the thickness of another one of the top metal layers. The BSE detector can be used in an apparatus of charged-particle beam for imaging a sample material. Signals from the detection components having top metal layers of different thicknesses can be inputted into different signal amplifier circuits to get different energy bands of BSE image.

Dependencies are inferred from the claim text.