US 11,851,326 B2 · Compositions and aggregates comprising boron nitride nanotube structures, and methods of making

Abstract

A composition (or an aggregate) comprising a h-BN/BNNT structure that comprises a boron nitride nanotube structure and at least a first hexagonal boron nitride structure. Also, a composition comprising at least a first epitaxial h-BN/BNNT structure and at least one metal adhered to the first epitaxial h-BN/BNNT structure. Also, a composition (or an aggregate) that comprises independent boron nitride nanotubes, in which a total mass percentage of independent hexagonal boron nitride and residual boron in the composition is not more than 35%. Also, a material comprising at least a first hexagonal boron nitride structure and at least a first boron nitride nanotube structure, wherein atoms in the first hexagonal boron nitride structure are epitaxially aligned with atoms in the first boron nitride nanotube structure that are closest to the first hexagonal boron nitride structure.

Claims20

Dependent claims

A composition comprising:

at least a first h-BN/BNNT structure,
the first h-BN/BNNT structure comprising at least a first boron nitride nanotube structure and at least a first hexagonal boron nitride structure, wherein:
a sum of [1] a quantity of independent boron nitride nanotubes in the composition that have a length of at least 50 nm, and [2] a quantity of boron nitride nanotube structures in the composition that have a length of at least 50 nm, is at least ten,
for each of a quantity of boron nitride nanotube structures that is at least 10% of the sum of [1] the quantity of independent boron nitride nanotubes in the composition that have a length of at least 50 nm, and [2] the quantity of boron nitride nanotube structures in the composition that have a length of at least 50 nm:
the boron nitride nanotube structure has a length of at least 50 nm, and a total of at least 10% of the outermost wall of the boron nitride nanotube structure is covered by hexagonal boron nitride structures.

2 more elements

A composition comprising:

at least a first epitaxial h-BN/BNNT structure;
and
at least one metal,
the first epitaxial h-BN/BNNT structure comprising at least a first boron nitride nanotube structure and at least a first hexagonal boron nitride structure,
the first hexagonal boron nitride structure epitaxial with respect to the first boron nitride nanotube structure, wherein atoms in the first hexagonal boron nitride structure are epitaxially aligned with the atoms in the first boron nitride nanotube structure that are closest to the first hexagonal boron nitride structure,
the at least one metal adhered to the first epitaxial h-BN/BNNT structure.

3 more elements

A material comprising at least a first hexagonal boron nitride structure and at least a first boron nitride nanotube structure, wherein atoms in the first hexagonal boron nitride structure are epitaxially aligned with atoms in the first boron nitride nanotube structure that are closest to the first hexagonal boron nitride structure.

Dependencies are inferred from the claim text.

Compositions and aggregates comprising boron nitride nanotube structures, and methods of making

Life of this patent

Compositions and aggregates comprising boron nitride nanotube structures, and methods of making

Life of this patent

Abstract

Claims20