Methods of making semiconductor X-ray detector

An image sensor comprising:

• one or more packages of semiconductor radiation detectors;
• wherein each of the one or more packages comprises a radiation detector;
• wherein the radiation detector comprises a radiation absorption layer on a first strip of semiconductor wafer and an electronics layer on a second strip of semiconductor wafer;
• wherein the radiation absorption layer is continuous along the first strip of semiconductor wafer with no coverage gap;
• wherein the first strip and the second strip are longitudinally aligned and bonded together;
• wherein the radiation absorption layer comprises an electrode and the electronics layer comprises an electronics system, the electronics system comprises:
• a first voltage comparator configured to compare a voltage of the electrode to a first threshold;
• a second voltage comparator configured to compare the voltage to a second threshold;
• a counter configured to register a number of radiation photons or particles reaching the radiation absorption layer;
• a controller;
• wherein the controller is configured to start a time delay from a time at which the first voltage comparator determines that an absolute value of the voltage equals or exceeds an absolute value of the first threshold;
• wherein the controller is configured to activate the second voltage comparator during the time delay;
• wherein the controller is configured to cause the number registered by the counter to increase by one, if the second voltage comparator determines that an absolute value of the voltage equals or exceeds an absolute value of the second threshold.