Scintillator for charged particle beam apparatus and charged particle beam apparatus

Abstract

The purpose of the present invention is to provide a scintillator for a charged particle beam device and a charged particle beam device which achieve both an increase in emission intensity and a reduction in afterglow intensity. This scintillator for a charged particle beam device is characterized by comprising a substrate (13), a buffer layer (14) formed on a surface of the substrate (13), a stack (12) of a light emitting layer (15) and a barrier layer (16) formed on a surface of the buffer layer (14), and a conductive layer (17) formed on a surface of the stack (12) and by being configured such that the light emitting layer (15) contains InGaN, the barrier layer (16) contains GaN, and the ratio b/a of the thickness b of the barrier layer (16) to the thickness a of the light emitting layer (15) is 11 to 25.

Dependencies are inferred from the claim text.