# US 11,837,568 B2 · Bonding structures and methods for forming the same

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- Number: US 11,837,568 B2
- Document ID: US11837568B2
- Status: Granted
- Kind: B2
- Application number: 17/460,153
- Filed: 2021-08-27
- Published: 2022-10-27
- Granted: 2023-12-05
- Earliest claimed: 2021-04-23
- Assignees: Materials Technology Corporation
- Applicants: AG Materials Technology Co., Ltd.
- Inventors: Tung-Han Chuang; Hsing-Hua Tsai
- Web page: https://patentgrep.com/patent/US11837568B2

## CPC

- H10W 72/30: Die-attach connectors
- H10W 72/013: {of die-attach connectors}
- H10W 72/073: {of die-attach connectors}
- H10W 72/012: {of bump connectors, dummy bumps or thermal bumps}
- H10W 72/01238: {in gaseous form, e.g. by CVD or PVD}
- H10W 72/01251: {Changing the shapes of bumps}
- H10W 72/01255: {by using masks}
- H10W 72/01338: {in gaseous form, e.g. by CVD or PVD}
- H10W 72/01938: {in gaseous form, e.g. by CVD or PVD}
- H10W 72/01951: {Changing the shapes of bond pads}
- H10W 72/01955: {by using masks}
- H10W 72/0198: {batch processes}
- H10W 72/072: {of bump connectors}
- H10W 72/07232: {Compression bonding, e.g. thermocompression bonding}
- H10W 72/07331: {Connecting techniques}
- H10W 72/07332: {Compression bonding, e.g. thermocompression bonding}
- H10W 72/07336: {Soldering or alloying}
- H10W 72/20: Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W 72/221: {Structures or relative sizes}
- H10W 72/222: {Multilayered bumps, e.g. a coating on top and side surfaces of a bump core}
- H10W 72/241: {Dispositions, e.g. layouts}
- H10W 72/242: {relative to the surface, e.g. recessed, protruding}
- H10W 72/252: {comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu}
- H10W 72/29: Bond pads specially adapted therefor
- H10W 72/321: {Structures or relative sizes of die-attach connectors}
- H10W 72/322: {Multilayered die-attach connectors, e.g. a coating on a top surface of a core}
- H10W 72/323: {characterised by the structures of the outermost layers, e.g. multilayered coatings}
- H10W 72/352: {comprising metals or metalloids, e.g. solders}
- H10W 72/355: {of outermost layers of multilayered die-attach connectors, e.g. material of a coating}
- H10W 72/59: Bond pads specially adapted therefor
- H10W 72/923: {Bond pads having multiple stacked layers}
- H10W 72/9415: {relative to the surface, e.g. recessed, protruding}
- H10W 72/952: {comprising metals or metalloids, e.g. PbSn, Ag or Cu}
- H10W 80/314: {characterized by direct bonding of pads or other interconnections}
- H10W 80/327: {characterised by the direct bonding of insulating parts, e.g. of silicon oxide layers}
- H10W 90/732: {between stacked chips}
- H10W 95/00: Packaging processes not covered by the other groups of this subclass
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A bonding structure is provided, wherein the bonding structure includes a first substrate, a second substrate, a first adhesive layer, a second adhesive layer, and a silver feature. The second substrate is disposed opposite to the first substrate. The first adhesive layer is disposed on the first substrate. The second adhesive layer is disposed on the second substrate and opposite the first adhesive layer. The silver feature is disposed between the first adhesive layer and the second adhesive layer. The silver feature includes a silver nano-twinned structure that includes twin boundaries that are arranged in parallel. The parallel-arranged twin boundaries include 90% or more [111] crystal orientation.

## Claims

### Claim 1

A bonding structure, comprising:
a first substrate;
a second substrate disposed opposite to the first substrate;
a first adhesive layer disposed on the first substrate;
a second adhesive layer disposed on the second substrate and opposite to the first adhesive layer; and
a silver feature disposed between the first adhesive layer and the second adhesive layer, wherein the silver feature comprises a silver nano-twinned structure comprising parallel-arranged twin boundaries, wherein the parallel-arranged twin boundaries comprise 90% or more crystal orientation, wherein at least 80% of the silver feature is the silver nano-twinned structure.

### Claim 2 (depends on 1)

The bonding structure as claimed in claim 1, wherein the first adhesive layer and the second adhesive layer are respectively disposed on entire opposing surfaces of the first substrate and the second substrate, and wherein the silver feature is a silver film.

### Claim 3 (depends on 1)

The bonding structure as claimed in claim 1, wherein the first adhesive layer and the second adhesive layer are respectively disposed on partial opposing surfaces of the first substrate and the second substrate, and wherein the silver feature is a silver pillar and sidewalls of the silver pillar are aligned with sidewalls of the first adhesive layer and the second adhesive layer.

### Claim 4 (depends on 1)

The bonding structure as claimed in claim 1, wherein a thickness of the silver feature is at least 3.0 μm.

### Claim 5 (depends on 1)

The bonding structure as claimed in claim 1, wherein a thickness of the silver nano-twinned structure is at least 2.0 μm.

### Claim 6 (depends on 1)

The bonding structure as claimed in claim 1, wherein a distance between the parallel-arranged twin boundaries is between 1 nm and 100 nm.

### Claim 7 (depends on 1)

The bonding structure as claimed in claim 1, wherein a thickness of each of the first adhesive layer and the second adhesive layer is 0.01 μm to 0.1 μm.

### Claim 8 (depends on 1)

The bonding structure as claimed in claim 1, wherein each of the first adhesive layer and the second adhesive layer comprises titanium (Ti), chromium (Cr), titanium tungsten (TiW), or a combination thereof.

### Claim 9 (depends on 1)

The bonding structure as claimed in claim 1, wherein each of the first substrate and the second substrate comprises Si wafer, SiC wafer, GaAs wafer, GaN wafer, or a combination thereof.

### Claim 10 (depends on 1)

The bonding structure as claimed in claim 1, further comprising: a transition grain layer between the first adhesive layer and the silver feature and/or between the second adhesive layer and the silver feature.