Diamond semiconductor system and method
AssigneeAkhan Semiconductor, Inc.
InventorAdam Khan
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Abstract
Disclosed herein is a new and improved system and method for fabricating monolithically integrated diamond semiconductor. The method may include the steps of seeding the surface of a substrate material, forming a diamond layer upon the surface of the substrate material; and forming a semiconductor layer within the diamond layer, wherein the diamond semiconductor of the semiconductor layer has n-type donor atoms and a diamond lattice, wherein the donor atoms contribute conduction electrons with mobility greater than 770 cm.sup.2/Vs to the diamond lattice at 100 kPa and 300K, and Wherein the n-type donor atoms are introduced to the lattice through ion tracks.
Claims19
A method of fabricating diamond films, the method including the steps of:
- seeding a surface of silicon dioxide substrate material;
- depositing a low temperature diamond layer upon the surface of the substrate material;
- and
- modifying the low temperature diamond layer by including non-carbon atoms to create at least two layers having differing substitutional atoms.
A method of fabricating diamond films, the method including the steps of:
- providing a metal layer;
- depositing a low temperature diamond layer upon the surface of the metal;
- and
- modifying the low temperature diamond layer by including non-carbon atoms to create at least two layers having differing substitutional atoms.
Dependencies are inferred from the claim text.