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US 11,837,430 B2Granted
Energy filter element for ion implantation systems for the use in the production of wafers
AssigneeMi2-Factory GmbH
InventorsFlorian Krippendorf, Constantin Csato
Life of this patent
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Abstract
A method of doping a wafer includes implanting ions into a wafer by irradiating the wafer with an ion beam using an implantation device. The implantation device includes a filter frame and a filter held by the filter frame, wherein the filter is irradiated by the ion beam passing through the filter to the wafer, and the filter is arranged such that protruding microstructures of the filter face away from the wafer and towards the ion beam.
Claims1
A method of doping a wafer, comprising:
- implanting ions into a wafer by irradiating the wafer with an ion beam using an implantation device, the implantation device comprising a filter frame and a filter held by the filter frame, wherein the filter is irradiated by the ion beam passing through the filter to the wafer, and
- wherein the filter has an even base surface on one side and protruding microstructures on an opposite side, and wherein the filter is arranged such that the protruding microstructures of the filter face away from the wafer and towards the ion beam, and
- wherein the filter is tilted in such a way with respect to the wafer during the implanting that the even base surface of the filter is arranged at an angle greater than zero with respect to a surface of the wafer which faces towards the ion beam.
Dependencies are inferred from the claim text.